The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2003
Filed:
Jun. 03, 1999
Masatake Nakano, Gunma-ken, JP;
Katsuo Yoshizawa, Nagano-ken, JP;
Shin-Etsu Handotai Co., Ltd., Chiyoda-Ku, JP;
Abstract
A method for manufacturing an SOI wafer. The method includes forming an oxide film on a surface of at least one silicon wafer of two silicon wafers. The method also includes bonding the silicon wafers through the oxide film at room temperature to form a room temperature bond end, one of the two silicon wafers being a bond wafer. The method further includes heat treating the wafers in an oxidizing atmosphere to form a heat treatment bond end. Thereafter, an outer periphery of the bond wafer is removed from an outer peripheral edge of the bond wafer up to a region between the room temperature bond end and the heat treatment bond end. The thickness of the bond wafer is reduced to form an SOI layer.