The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2003
Filed:
Apr. 30, 2001
Applicant:
Inventor:
Jain-Hon Chen, Chiayi, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A method of fabricating a shallow trench isolation, which is applicable on a substrate, is described. A pad oxide layer, a silicon oxynitride layer and a patterned photoresist layer are formed on the substrate, wherein a thickness of the silicon oxynitride layer is greater than 800 angstroms. Subsequently, the exposed silicon oxynitride layer is removed by using the photoresist layer as a mask, and the exposed pad oxide layer and a part of the substrate are removed by using the silicon oxynitride layer as a mask to form a shallow trench. An isolating material is then filled into the shallow trench to form a shallow trench isolation.