The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2003
Filed:
Jul. 13, 2001
Applicant:
Inventors:
Andreas Knorr, Fishkill, NY (US);
Mihel Seitz, Wappingers Falls, NY (US);
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A method of providing isolation between element regions of a semiconductor memory device ( ). Isolation trenches ( ) are filled using several sequential anisotropic insulating material ( ) HPD-CVD deposition processes, with each deposition process being followed by an isotropic etch back to remove the insulating material ( ) from the isolation trench ( ) sidewalls. A nitride liner ( ) may be deposited after isolation trench ( ) formation. A top portion of the nitride liner ( ) may be removed prior to the deposition of the top insulating material ( ) layer.