The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2003
Filed:
Sep. 18, 2001
Kenneth J. Giewont, Hopewell Junction, NY (US);
Eric Adler, Jericho, VT (US);
Neena Garg, Fishkill, NY (US);
Michael J. Hargrove, Clinton Corners, NY (US);
Charles W. Koburger, III, Essex Junction, VT (US);
Junedong Lee, Hopewell Junction, NY (US);
Dominic J. Schepis, Wappingers Falls, NY (US);
Isabel Ying Yang, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A novel method for forming substrate contact regions on a SOI substrate without requiring additional space, and in order to provide lower diffusion capacitance. The method utilizes known semiconductor processing techniques. This method for selectively modifying the BOX region of a SOI substrate involves first providing a silicon substrate. Then, ion implanting the base using SIMOX techniques (e.g. O implant) is accomplished. Next, the substrate is photopatterned to protect the modified BOX region. Then, further ion implanting using a “touch-up” O implant is accomplished, thereby resulting in a good quality BOX as typically practiced. The final step is annealing the substrate. The area of the substrate, which had a mask present, would not receive the “touch-up” O implant (second ion implant), which in turn would result in a leaky BOX.