The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2003
Filed:
Dec. 03, 2001
Shinichi Fukada, Hino, JP;
Kazuo Nojiri, Higashimurayama, JP;
Takashi Yunogami, Niiza, JP;
Shoji Hotta, Tokyo, JP;
Hideo Aoki, Musashimurayama, JP;
Takayuki Oshima, Ome, JP;
Nobuyoshi Kobayashi, Kawagoe, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Insulating films through (of which insulating films are silicon nitride films and insulating films are silicon oxide films) are sequentially formed on the wires of the fourth wiring layer and groove pattern is transferred into the insulating film by means of photolithography. An anti-reflection film is formed to fill the grooves of the insulating film and then a resist film carrying a hole pattern is formed. The films are subjected to an etching operation in the presence of the resist film to transfer the hole pattern into the insulating films and part of the insulating film . Subsequently, the resist film and the anti-reflection film are removed and the groove pattern and the hole pattern are transferred respectively into the insulating film and the insulating film by using the insulating film as mask.