The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2003
Filed:
Sep. 25, 2000
Shigeru Kawamura, Yamanashi, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A reactant gas is introduced into a process chamber under a temperature which is lower than reactive temperature of the reactant gas so that voids in a porous amorphous insulation film on a sample is filled with the introduced reactant gas. And chemical vapor deposition is carried out with heating the porous amorphous insulation film up to a temperature which is higher than the reactive temperature of the reactant gas to form a crystalline thin film on inner surfaces of the voids. Image data representing the porous amorphous insulation film in which the crystalline thin film is formed are generated with using a transmission electron microscope, and the porous amorphous insulation film is observed based on the image data to measure topographical characteristics of the porous amorphous insulation film such as void's size, porosity, etc.