The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2003
Filed:
May. 01, 2000
Koji Shimomura, Takatsuki, JP;
Yoshiaki Kinoshita, Shizuoka, JP;
Satoru Funato, Shizuoka, JP;
Yuko Yamaguchi, Isehara, JP;
Other;
Abstract
A method of forming a pattern in which production of reaction products in the interface between an organic anti-reflective coating and a radiation sensitive material coating is suppressed, the number of residues of an etchable layer formed after etching is decreased, and which provides a etched pattern having high resolution and good dimensional accuracy. According to the method, an etchable layer ( ) composed of polysilicon coating an organic anti-reflective coating ( ), and a radiation sensitive material coating ( ) composed of a chemically amplified resist material containing as acid generators both (a) onium salt compound and (b) at least one of a sulfone compound and a sulfonate compound are formed on a semiconductor substrate ( ), the radiation sensitive material coating ( ) is imagewise exposed through the mask ( ) and developed to form a patterned radiation sensitive material coating ( ). Thereafter, preferably the anti-reflective coating is etched using a mixture gas of SO and O , further the etchable layer is dry-etched to form a pattern of the etchable layer.