The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2003

Filed:

Jun. 29, 2001
Applicant:
Inventors:

Bi-Ming Yen, Fremont, CA (US);

Tuqiang Ni, Fremont, CA (US);

Lumin Li, Santa Clara, CA (US);

David Hemker, San Jose, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/00 ; H01L 2/100 ;
U.S. Cl.
CPC ...
H05H 1/00 ; H01L 2/100 ;
Abstract

A plasma processing chamber is provided. The plasma processing chamber includes a bottom electrode configured to support a substrate and a top electrode located over the bottom electrode. The plasma processing chamber further includes a plasma confinement assembly designed to transition between a closed orientation and an open orientation. In the closed orientation, the plasma confinement assembly defines a first volume for plasma during processing, and in the open orientation, the plasma confinement assembly defines a second volume for plasma during processing which is larger than the first volume.


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Yen, Bi-Ming. (2003). Configurable plasma volume etch chamber (U.S. Patent No. 6527911). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6527911

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