The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2003
Filed:
Oct. 05, 2001
Masashi Takahashi, Kanagawa, JP;
Toshio Nagata, Tokyo, JP;
Yoshirou Tsurugida, Miyazaki, JP;
Takashi Ohsako, Tokyo, JP;
Hirotaka Mori, Miyagi, JP;
Akihiko Ohara, Tokyo, JP;
Hidetsugu Uchida, Tokyo, JP;
Hiroaki Uchida, Yamanashi, JP;
Katsuji Yoshida, Tokyo, JP;
Masahiro Takahashi, Saitama, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A method for forming an insulating film is provided which is capable of inhibiting spontaneous growth of a silicon oxide film formed on a silicon substrate and an increase in thickness of a film caused by exposure to an atmosphere. After having allowed a silicon dioxide layer with a predetermined thickness to grow on a surface of a silicon crystal, a surface of the silicon dioxide is exposed to organic gas containing no hydroxyl group or is exposed to ammonia gas.