The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2003
Filed:
Oct. 10, 2000
Chen-Fa Lu, Kaohsiung, TW;
Chen-Peng Fan, Hsin Chu Hsien, TW;
Jui-Ping Chuang, Taipei, TW;
Tien-Chen Hu, Ping Tong, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Abstract
Within a method for fabricating a microelectronic fabrication there is first provided a substrate having formed thereover a minimum of one microelectronic layer, where the minimum of one microelectronic layer is at least partially transparent to an incident radiation beam. There is then chemical mechanical polish (CMP) planarized the minimum of one microelectronic layer, while employing a chemical mechanical polish (CMP) planarizing method, to form from the minimum of one microelectronic layer a minimum of one chemical mechanical polish (CMP) planarized microelectronic layer. Within the method, a chemical mechanical polish (CMP) planarizing endpoint within the chemical mechanical polish (CMP) planarizing method with respect to the minimum of one chemical mechanical polish (CMP) planarized microelectronic layer is determined while employing the incident radiation beam incident upon the minimum of one microelectronic layer, in conjunction with a derivative of a property of a minimum of one reflected portion of the incident radiation beam reflected from the minimum of one microelectronic layer as the minimum of one microelectronic layer is chemical mechanical polish (CMP) planarized to form the minimum of one chemical mechanical polish (CMP) planarized microelectronic layer.