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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6521931 B1

PDFFull Text
Date of Patent:
Feb. 18, 2003

Filed:

Jan. 09, 2002

Self-aligned, magnetoresitive random-access memory (mram) structure utilizing a spacer containment scheme

Applicant:
Inventors:

Gurtej Sandhu, Boise, ID (US);

Roger Lee, Boise, ID (US);

Dennis Keller, Boise, ID (US);

Trung T. Doan, Boise, ID (US);

Max F. Hineman, Boise, ID (US);

Ren Earl, Meridian, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

Dickstein Shapiro Morin & Oshinsky LLP

Primary Examiner:

Richard Elms

Assistant Examiner:

Brad Smith

Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract

A method of fabricating a MRAM structure and the resulting structure. The MRAM structure of the invention has the pinned layer recessed within a trench with the upper magnetic layer positioned over it. The method of MRAM fabrication utilizes a spacer processing technique, whereby the upper magnetic layer of the MRAM stack structure is formed between the region defined by the spacers, thereby allowing for self-alignment of the upper magnetic layer over the underlying pinned magnetic layer.

Find Patent Forward Citations

Sandhu, Gurtej. (2003). Self-aligned, magnetoresitive random-access memory (mram) structure utilizing a spacer containment scheme (U.S. Patent No. 6521931). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6521931

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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