The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2003
Filed:
Feb. 28, 2000
Applicant:
Inventors:
Chi-Tung Huang, Hsin-Chu, TW;
Wan-Yi Liu, Kao-Hsiung, TW;
Assignee:
Macronix International Co. Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/972 ;
U.S. Cl.
CPC ...
H01L 2/972 ;
Abstract
The present invention provides a passivation film on a semiconductor wafer. The semiconductor wafer comprises a dielectric layer and a patterned conductive layer on the dielectric layer. The passivation film comprises a high density plasma (HDP) oxide layer positioned on the surface of the conductive layer and on the surface of the dielectric layer that is not covered by the conductive layer, a silicon nitride layer positioned on the HDP oxide layer, and a water-resistant layer positioned on the silicon nitride layer. The HDP oxide layer possesses good gap filling abilities to fill the spaces inside the conductive layer.