The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2003
Filed:
Oct. 23, 2001
Neng-Hui Yang, Hsin-Chu, TW;
Chinh-Fu Lin, Taipei, TW;
Yi-Fang Cheng, Yun-Lin Hsien, TW;
Cheng-Yuan Tsai, Yun-Lin Hsien, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
The invention shows a method of a surface treatment on a fluorine silicate glass film. At first a fluorine silicate glass layer is deposited on a semiconductor wafer. Partial fluorine ions in the fluorine silicate glass layer are in-situ removed to form a silicon oxide layer of a pre-determined thickness. Then, a photoresist layer is coated on the silicon oxide layer. After an exposing process, a pre-determined latent pattern is formed in the photoresist layer. Finally, after a developing process, the pre-determined latent pattern of the photoresist is removed so as to expose corresponding portions of the silicon oxide layer underneath the latent pattern of the photoresist layer. As a result, the present invention solves a problem that fluorine ions in the fluorine silicate glass layer diffuse to a surface of the fluorine silicate glass layer to combine with water to form hydrofluoric acid, that contaminates the photoresist and leads to reliability issues.