The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2003
Filed:
Apr. 23, 2001
Sheng Hsiung Chen, Taichung, TW;
Shun Long Chen, Hsin-Chu, TW;
Hungtse Lin, Nan-tou, TW;
Frank Hsu, Hsin-Chu, TW;
Tsu Shih, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A process for forming a dual damascene opening, in a composite layer comprised with low k layers, to accommodate a dual damascene type, copper structure, has been developed. The process features the use of a silicon oxide layer, formed on the surfaces of the composite layer, exposed in the narrow diameter, via hole component of the dual damascene opening. The silicon oxide layer prevents via poisoning, or outgassing of amines or hydroxyls from the low k layers exposed in the via hole opening, that can evolve during a subsequent photolithographic development cycle, used to define the trench shape component of the dual damascene opening. The protective silicon oxide layer is conformally formed on the exposed-surfaces of the via hole component, via a liquid phase deposition procedure, performed at room temperature.