The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2003
Filed:
Jul. 23, 1997
Chiang Fu, Hsin-chu, TW;
Yu-Chyi Harn, Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
The present invention provides a method for cleaning wafer surfaces in a scrubber by ion doped deionized water without the electrostatic discharge problem. The method can be carried out by first doping a quantity of deionized water with at least one species of ions from the group consisting of OH , F , Cl , NH and H any other suitable ions. The added ions significantly reduce the resistivity of the DI water such that DI water is no longer a perfect insulator and therefore, when sprayed onto wafer surfaces covered by an insulating material, the generation of electrostatic charges is significantly reduced. As a result, the undesirable effect of electrostatic discharge can be significantly reduced or eliminated and the yield of the wafer fabrication process can be improved.