The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2003
Filed:
Jan. 02, 2002
Gary M. Hurtz, Pleasanton, CA (US);
Vladimir Rodov, Redondo Beach, CA (US);
Geeng-Chuan Chern, Cupertino, CA (US);
Paul Chang, Saratoga, CA (US);
Ching-Lang Chiang, Saratoga, CA (US);
APD Semiconductor, Inc., San Jose, CA (US);
Abstract
A semiconductor current limiting device is provided by a two-terminal vertical N(P)-channel MOSFET device having the gate, body, and source terminals tied together as the anode and the drain terminal as the cathode. The doping profile of the body is so tailored with ion implantation that a depletion region pinches off to limit current. The body comprises a shallow implant to form a MOS channel and an additional deep implant through a spacer shielding the channel area. Implanted a higher energies and at an acute angle, the deep implant protrudes into the regular current path of the vertical MOSFET.