The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2003
Filed:
Jun. 07, 2002
Applicant:
Inventor:
Chi-Tung Huang, Hsinchu, TW;
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A method of planarizing a dielectric layer of a flash memory. In the present invention, a high selectivity slurry is used to planarize a dielectric layer of a flash memory. The high selectivity slurry comprises a Ceria-polishing-particle-containing slurry having CeO and a planarity selective additive having polycarboxylate. The concentration of CeO in the Ceria-polishing-particle-containing slurry is 5 wt % within a tolerance around 25% and the concentration of polycarboxylate in the planarity selective additive is 1-10 wt %.