The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2003
Filed:
Feb. 24, 2000
Kazuyuki Egashira, Saga, JP;
Masahiko Okui, Osaka, JP;
Manabu Nishimoto, Osaka, JP;
Tadami Tanaka, Saga, JP;
Shunji Kuragaki, Saga, JP;
Takayuki Kubo, Saga, JP;
Shingo Kizaki, Saga, JP;
Junji Horii, Saga, JP;
Makoto Ito, Saga, JP;
Sumitomo Metal Industries, Ltd., Osaka, JP;
Abstract
A method of producing a high-quality silicon single crystal of a large diameter and a long size in a good yield by controlling the positions where ring-like oxygen-induced stacking faults (R-OSF) occur in the crystal faces and minimizing grown-in defects such a dislocation clusters and infrared scattering bodies that are introduced in the pulling step. Wafers produced from the above-high-quality silicon single crystal contain little harmful defects that would deteriorate device characteristics and can be effectively adapted to larger scale integration and size reduction of the devices. Therefore, the method can be extensively utilized in the field of producing semiconductor silicon single crystals.