The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2003
Filed:
Jun. 14, 2001
Huong Thanh Nguyen, San Ramon, CA (US);
Yunsang Kim, San Jose, CA (US);
Ellie Yieh, San Jose, CA (US);
Li-Qun Xia, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of forming an optical marker layer for etch endpoint determination in integrated circuit fabrication processes is disclosed. The optical marker layer is used in conjunction with organic and/or carbon-containing material layers that are used as bulk insulating materials and barrier materials. The optical marker layer is formed on the bulk insulating material layer and/or the barrier material layer by incorporating an optical marker into the surface thereof. The optical marker is incorporated into the surface of the bulk insulating material layer and/or the barrier material layer by treating such layer with an optical marker-containing gas. The optical marker layer provides an optical marker emission spectrum when it is etched during a subsequent patterning step.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile