The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2003
Filed:
Oct. 25, 2001
Jung-Yu Hsieh, Hsinchu, TW;
Uway Tseng, Houli Shiang, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A method for forming a low loss dielectric layer in the tungsten chemical mechanic grinding process is disclosed. After forming a dielectric layer on the semiconductor substrate and smoothing the dielectric layer as an inner dielectric layer, a stop layer of undoped silicon dioxide, organ spin on glass, or silicon oxygen nitride are coated thereon. After process of plug lithographic and etching, a barrier layer of tungsten plug and metal tungsten are deposited sequentially. Finally, the surplus tungsten metal layer on the surface of a dielectric layer is removed by chemical mechanic grinding process until the stop layer is exposed. In the present invention, the stop layer is used to repair the scratches or defects generated from the smoothness in the chemical mechanic grinding process. Furthermore, in the tungsten chemical mechanic grinding process, it can assure that the inner dielectric layer will not be ground so that the object of low loss is achieved.