The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2003
Filed:
Aug. 09, 2000
Fu-Tien Weng, Taow-Yuan, TW;
Chiu-Kung Chang, Hsin-Chu, TW;
Yu-Kung Hsiao, Tao-Yuan, TW;
Bii-Junq Chang, Hsin-Chu, TW;
Kuo-Lian Lu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd, Hsin Chu, TW;
Abstract
Within a method for forming an image array optoelectronic microelectronic fabrication there is first provided a substrate. There is then formed at least in part over the substrate a bidirectional array of image array optoelectronic microelectronic pixel elements comprising a plurality of series of patterned color filter layers corresponding with a plurality of colors. Within the method, at least one series of patterned color filter layers within the plurality of series of patterned color filter layers corresponding with at least one color within the plurality of colors is formed employing a photolithographic method which employs a plurality of separate photoexposure steps for forming a plurality of separate sub-series of patterned color filter layers within the series of patterned color filter layers corresponding with the at least one color within the plurality of colors. By employing the plurality of separate photoexposure steps for forming the plurality of separate sub-series of patterned color filter layers within the series of patterned color filter layers corresponding with the at least one color within the plurality of colors, the image array optoelectronic microelectronic fabrication is formed with enhanced resolution.