The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2003

Filed:

Feb. 23, 2000
Applicant:
Inventors:

Toshimi Kawahara, Kawasaki, JP;

Hirohisa Matsuki, Kawasaki, JP;

Yasuhiro Shinma, Kawasaki, JP;

Yoshiyuki Yoneda, Kawasaki, JP;

Norio Fukasawa, Kawasaki, JP;

Yuzo Hamanaka, Kawasaki, JP;

Kenichi Nagashige, Kawasaki, JP;

Takashi Hozumi, Kasugai, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B29C 3/318 ; B29C 3/368 ; B29C 4/328 ;
U.S. Cl.
CPC ...
B29C 3/318 ; B29C 3/368 ; B29C 4/328 ;
Abstract

A method of producing semiconductor devices which have an excellent separability from a metal mold after resin encapsulation and thus eliminates the need to clean the metal mold. A metal mold for producing such semiconductor devices is also provided. According to the method of the present invention, the metal mold is first opened, and two separation sheets are disposed on dividing surfaces including cavity forming surfaces of a first metal mold and a second metal mold. A substrate is then placed on one of the separation sheets, with its semiconductor chip formed surface facing the second metal mold. An encapsulation resin is provided on the substrate placed on one of the separation sheets. The metal mold in a heated state is closed and pressed to form a resin layer for encapsulating electrodes formed on the substrate. The metal mold is again opened, and the resin-encapsulated substrate is taken out of the metal mold. After the separation sheets are removed, the substrate is divided into individual semiconductor devices.


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