The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2003
Filed:
May. 28, 2002
Yuhturng Liu, Liu-Kuei Hsiang, TW;
Chi-Tung Huang, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A method of fabricating a shallow trench isolation structure. A pad oxide layer, a mask layer, a dielectric anti-reflection coating layer and a cap oxide layer are formed on a substrate sequentially. A trench is formed in the substrate. A liner oxide layer is formed along a surface of the trench. An isolation layer is formed over the substrate to fill the trench. Using the mask layer as a polishing endpoint, the insulation layer, the dielectric anti-reflection coating layer and the cap oxide layer over the mask layer are removed. The thickness of the mask layer is controlled within a first fixed range, and the thickness of the dielectric anti-reflection coating layer is controlled, within a second fixed range, such that the light source of the optical endpoint detection system can produce a maximum reflected light signal. The mask layer and the pad oxide layer are then removed.