The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2003
Filed:
Aug. 10, 2001
Len Y. Tsou, New City, NY (US);
Hongwen Yan, Somers, NY (US);
Qingyun Yang, Hopewell Junction, NY (US);
Chienfan Yu, Highland Mills, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a notched gate structure having substantially vertical sidewalls and a sub-0.05 &mgr;m electrical critical dimension is provided. The method includes forming a conductive layer on an insulating layer; forming a mask on the conductive layer so as to at least protect a portion of the conductive layer; anisotropically etching the conductive layer not protected by the mask so as to thin the conductive layer to a predetermined thickness and to form a conductive feature underlying the mask, the conductive feature having substantially vertical sidewalls; forming a passivating layer at least on the substantially vertical sidewalls; and isotropically etching remaining conductive layer not protected by the mask to remove the predetermined thickness thereby exposing a lower portion of said conductive feature not containing the passivating layer, while simultaneously removing notched regions in the lower portion of the conductive feature.