The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2003

Filed:

Feb. 04, 2002
Applicant:
Inventors:

Louis N. Koppel, San Jose, CA (US);

William Johnson, Livermore, CA (US);

Assignee:

Therma-Wave, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 2/306 ;
U.S. Cl.
CPC ...
G01N 2/306 ;
Abstract

A metrology system and method for measuring the thickness of thin-films of semiconductor wafer. This system and method analyze x-ray reflectivity data to determine transmission characteristics of thin-film layers. Based on these transmission characteristics the thickness of the thin-layer can be determined. Unlike some prior systems and methods, the system and method herein does not determine the thickness of the thin-film layer based on a fringe pattern in reflectivity for the thin-film layer. The fact that the system and method herein does not rely the fringe pattern is particularly advantageous in situations where the thin-film layer is of thickness which makes it very difficult to resolve the fringe pattern in the reflectivity data.


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