The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2003
Filed:
Dec. 20, 2000
Masaru Izawa, Hino, JP;
Shinichi Tachi, Sayama, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A technique of dry etching the surface of a wafer by using a dry etching apparatus in which the distance between a wafer and a surface facing the wafer is set to the half or less of the diameter of the wafer is disclosed. Even in the case of using, especially, a wafer having a large diameter, the incident amount of etching reaction by-products in the peripheral portion of the wafer and that in the center portion of the wafer are uniformed. Thus, a uniform etching process over the whole surface of the wafer can be realized.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile