Semiconductor device and manufacturing method thereof

Abstract

There are provide a semiconductor device capable of increasing the operating speed of MOS transistors and improving current driving capability, and a method of manufacturing such a semiconductor device. A semiconductor device comprises a silicon substrate ( ), an element isolation insulation film ( ), a gate structure selectively formed on the main surface of the silicon substrate ( ), and a sidewall ( ) formed on the side face of the gate structure. The gate structure has a laminated structure with a gate insulation film ( ) formed of a silicon oxide film, a gate electrode ( ) formed of polysilicon, and a cobalt silicide layer ( ) stacked in this order. The semiconductor device further comprises a source/drain region ( ) selectively formed in the main surface of the silicon substrate ( ) and a cobalt silicide layer ( ) formed in the main surface of the silicon substrate ( ), extending to a point under an end portion of the gate structure from a portion of the source/drain region ( ) exposed from the sidewall and the gate structure.