The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2003

Filed:

Mar. 09, 2000
Applicant:
Inventors:

Peter K. Loewenhardt, Pleasanton, CA (US);

Gerald Z. Yin, San Jose, CA (US);

Philip M. Salzman, San Jose, CA (US);

Assignee:

Applied Materials Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H05H 1/00 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H05H 1/00 ;
Abstract

The invention is embodied in an RF plasma reactor for processing a semiconductor wafer, including as reactor chamber bounded by a chamber wall defining an interior region of the chamber, a gas inlet, an RF power source and an RF power applicator proximal the chamber and connected to the RF power source, and an opening in this chamber communicating with the interior region of the chamber. The invention further includes a magnet apparatus disposed adjacent said opening to resist flow of plasma ions through the opening, and the magnet apparatus comprising a first pair of magnetic poles and a second pair of magnetic poles, the first pair of magnetic poles facing the second pair of magnetic poles across the opening.


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