The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2003
Filed:
Jan. 10, 2002
Minoru Kogano, Tokyo, JP;
Yasuhiro Inokuchi, Tokyo, JP;
Makoto Sambu, Tokyo, JP;
Atsushi Moriya, Tokyo, JP;
Yasuo Kunii, Tokyo, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
An apparatus and a method for manufacturing a semiconductor device can provide a good quality film growth in a highly clean reaction atmosphere unaffected by contamination from a furnace opening portion. A reverse-diffusion preventing body is provided between a furnace opening flange and a boat susceptor so that a substrate processing space is isolated from a furnace opening portion space to thereby prevent reverse-diffusion of a contaminant which occurs at a furnace opening portion B, to the substrate processing space At a furnace opening flange a furnace opening exhausting tube is provided which constitutes a furnace opening system for exhausting the space independently of the space so that the space is exhausted while being purged by supplying a purge gas into the space to thereby remove a contaminant from the space A gas supplying nozzle which is introduced from the flange is extended from the space to the space so that a reaction gas is directly introduced into the space to thereby prevent a contaminant Within the space from being involved in the space