The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2002
Filed:
Mar. 16, 2000
Applicant:
Inventors:
Toshio Goto, Nisshin, JP;
Masaru Hori, Nisshin, JP;
Masafumi Ito, Osaka-fu, JP;
Nobuo Ishii, Osaka-fu, JP;
Satoru Kawakami, Sagamihara, JP;
Assignee:
Other;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G21K 5/10 ; H05H 1/30 ; A61N 5/00 ; H01J 3/708 ;
U.S. Cl.
CPC ...
G21K 5/10 ; H05H 1/30 ; A61N 5/00 ; H01J 3/708 ;
Abstract
A controlled plasma deposition system and method are provided including a vacuum vessel. An electron adding mass spectrometer is connected to a vacuum vessel for carrying out a gas treatment for a semi-conductor wafer. In the mass spectrometer, a gas in the vacuum vessel is incorporated, and electrons are added to the particles in the gas. Then the value of negative ions obtained by ionizing the particles, for example specific radicals, is measured. Once measured, the information is forwarded to a controller that may optimize the plasma deposition method.