The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2002
Filed:
Mar. 27, 2000
Applicant:
Inventors:
Haruhiro Harry Goto, Saratoga, CA (US);
William R. Harshbarger, San Jose, CA (US);
Kam S. Law, Union City, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A process for selectively etching silicon from a workpiece without etching silicon oxide or silicon nitride. The principal etchant gas is molecular fluorine gas (F ) that is not excited to a plasma state.