The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2002
Filed:
Mar. 21, 2002
Hung-Sui Lin, Tainan, TW;
Nian Kai Zous, Tau-Yuan, TW;
Han Chao Lai, Taichung, TW;
Tao Cheng Lu, Kaoshiung, TW;
Abstract
A nitride read only memory device that includes a substrate having a source region, a drain region, and a channel region formed therebetween, a first oxide layer formed over the channel region, a nitride layer formed over the first oxide layer, a second oxide layer formed over the nitride layer, a gate structure formed over the second oxide layer, wherein a region in the substrate underneath the gate structure excludes one of the source and drain regions, a plurality of sidewall spacers formed over the nitride layer and contiguous with the gate structure, and at least one injection point for injecting electrons into the nitride layer, wherein the injection point is located at a junction between the channel region and one of the source and drain regions, and wherein electron charges are stored in portions of the nitride layer underneath the sidewall spacers.