The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2002
Filed:
May. 01, 2000
Applicant:
Inventor:
David B. Fenner, Westford, MA (US);
Assignee:
Epion Corporation, Billerica, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
Methods are disclosed for gas-cluster ion-beam deposition of thin films on silicon wafers rendered free of native oxides by termination of the surface bonds and subsequent reactive deposition. Hydrogen termination of the surface of silicon renders it inert to reoxidation from oxygen-containing environmental gasses, even those found as residue in vacuum systems, such as those used to deposit films. Nitrogen termination improves the interface with overlying metal-oxide thin films. The film is formed in intimate contact with the silicon crystal surface forming a nearly ideal interface.