The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2002

Filed:

Apr. 17, 2000
Applicant:
Inventors:

Takashi Yunogami, Niiza, JP;

Shunji Sasabe, Iruma, JP;

Kazuyuki Suko, Hachioji, JP;

Jun Abe, Tachikawa, JP;

Takao Kumihashi, Musashino, JP;

Fumio Murai, Hinode-machi, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/26 ;
U.S. Cl.
CPC ...
G03F 7/26 ;
Abstract

In order that reaction products of low vapor pressure may be prevented from being deposited on the side wall of a predetermined pattern when this pattern is to be formed by dry-etching a Pt film or a PZT film, a resist mask having a rounded outer periphery at its head is used when the Pt film deposited on a semiconductor substrate is to be dry-etched. After this dry-etching, moreover, an overetching of a proper extent is performed to completely remove the side wall deposited film which is left on the side of the pattern. The resist mask is formed by exposing and developing a benzophenone novolak resist and subsequently by heating to set it while irradiating it, if necessary, with ultraviolet rays.


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