The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2002
Filed:
Jun. 01, 1999
Applicant:
Inventors:
Assignee:
Samsung Electronics Co. Ltd., , KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/10232 ;
U.S. Cl.
CPC ...
H01L 3/10232 ;
Abstract
A semiconductor device including an anti-reflective cap and spacer, a method of manufacturing the same, and a method of forming a photoresist pattern using the same are provided. The semiconductor device according to the present invention includes an anti-reflective cap and an anti-reflective spacer on an upper surface and side walls of a reflective pattern formed on the semiconductor substrate. Therefore, the deformation of the photoresist pattern by the light reflected from the reflective pattern is minimized during a photolithography process.
Kim, In-sung. (2002). Semiconductor device having anti-reflective cap and spacer, method of manufacturing the same, and method of manufacturing photoresist pattern using the same (U.S. Patent No. 6492701). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6492701
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