The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2002
Filed:
Mar. 16, 2001
Applicant:
Inventors:
Karsten Wieczorek, Boxdorf, DE;
Manfred Horstmann, Dresden, DE;
Rolf Stephan, Dresden, DE;
Michael Raab, Radebeul, DE;
Assignee:
Advanced Micro Devices, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
This invention provides methods of forming a field-effect transistor in an integrated circuit using self-aligning technology on the basis of a gate electrode and sidewall spacer masking procedure both for forming the device isolation features and the source and drain regions. This invention enables an increase of the integration-density of semiconductor devices, a minimization of the parasitic capacitances in field-effect transistor devices, and a quicker manufacturing process.