The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2002
Filed:
Jan. 09, 2002
Lung Chen, Hsinchu, TW;
Teng-Feng Wang, Chang-Hua Hsien, TW;
Zen-Long Yang, Hsinchu, TW;
Shih-Hui Chang, Taipei, TW;
Yung-Shin Wang, Taipei Hsien, TW;
Silicon Integrated Systems Corp., Hsin Chu, TW;
Abstract
A novel process for isolating devices on a semiconductor substrate is disclosed. An isolation layer is first formed over the semiconductor substrate and patterned into at least two isolation mesas on the substrate. Next, a blanket semiconductor layer is formed over the substrate with a thickness sufficient to cover the isolation mesas. The semiconductor layer is subjected to planarization until the isolation mesas are exposed, thus resulting in a semiconductor region between the two isolation mesas to serve as an active region for semiconductor devices.