The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2002
Filed:
Jun. 27, 2001
Masato Yamada, Annaka, JP;
Susumu Higuchi, Annaka, JP;
Kousei Yumoto, Annaka, JP;
Makoto Kawasaki, Annaka, JP;
Ken Aihara, Annaka, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
By providing a nitrogen-doped low carrier concentration layer having both of a donor concentration and an acceptor concentration controlled below 1×10 /cm at a p-n junction portion between an n-type GaP layer and a p-type GaP layer the luminance of the GaP light emitting device can be improved by as much as 20 to 30% over the conventional one. Suppressing the donor concentration and the acceptor concentration in the low carrier concentration layer below 1×10 /cm inevitably gives a carrier concentration, which is expressed as a difference between both concentrations, lower than 1×10 /cm accordingly. The emission efficiency upon injection of electrons or holes can be improved by suppressing the concentration of the donor which serves as non-emissive center below 1×10 /cm to thereby extend the carrier lifetime; and by concomitantly suppressing the carrier concentration at a level significantly lower than that in the adjacent layers and