The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2002
Filed:
Mar. 28, 2001
Li-Qun Xia, Santa Clara, CA (US);
Paul Fisher, Los Altos, CA (US);
Margaret Lynn Gotuaco, San Francisco, CA (US);
Frederic Gaillard, Meylan, FR;
Ellie Yieh, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of forming a low dielectric constant silicate material for use in integrated circuit fabrication processes is disclosed. The low dielectric constant silicate material is formed by reacting by reacting a gas mixture comprising an organosilane compound, an oxygen source, and an inert gas. Thereafter, a silicon carbide cap layer is formed on the silicate material by reacting a gas mixture comprising a silicon source and a carbon source. The silicon carbide cap layer protects the underlying organosilicate layer from cracking and peeling when it is hardened during a subsequent annealing step.