The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2002
Filed:
Mar. 17, 1999
Applicant:
Inventor:
Loi N. Nguyen, Carollton, TX (US);
Assignee:
STMicroelectronics, Inc., Carrollton, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18238 ; H01L 2/1336 ; H01L 2/13205 ; H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/18238 ; H01L 2/1336 ; H01L 2/13205 ; H01L 2/144 ;
Abstract
A technique for forming integrated circuit device contacts includes the formation of nitride spacers along side gate electrodes for LDD definition. In addition, a nitride cap layer is formed over the gate electrodes. When a contact opening is formed through the interlevel oxide dielectric, the nitride cap and sidewall spacers protect the gate electrode from damage and shorting. A highly doped poly plug is formed in the opening to make contact to the underlying substrate. Metalization is formed over the poly plug in the usual manner.