The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2002
Filed:
Jun. 14, 1999
Masahiro Kume, Shiga, JP;
Yuzaburo Ban, Osaka, JP;
Kenji Harafuji, Osaka, JP;
Isao Kidoguchi, Hyogo, JP;
Satoshi Kamiyama, Hyogo, JP;
Ayumu Tsujimura, Osaka, JP;
Ryoko Miyanaga, Nara, JP;
Akihiko Ishibashi, Osaka, JP;
Yoshiaki Hasegawa, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A nitride semiconductor laser device includes an n-type contact layer of n-type GaN and an n-type cladding layer of n-type Al Ga N formed on a substrate of sapphire. On the n-type cladding layer, a multiple quantum well active layer of Al Ga N/Al Ga N, a p-type leak barrier layer of p-type Al Ga N P and a p-type cladding layer of p-type Al Ga N P are successively formed. The p-type leak barrier layer has a wider energy gap than the n-type cladding layer, and the p-type leak barrier layer and the p-type cladding layer include phosphorus for making an acceptor level shallow with keeping a wide energy gap.