The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2002
Filed:
Jan. 28, 2002
Theodore A. Khoury, Chicago, IL (US);
Mark R. Jones, Mundelein, IL (US);
James W. Frame, Chicago, IL (US);
Advantest Corp., Tokyo, JP;
Abstract
A contact structure for testing a semiconductor wafer, a packaged LSI or a printed circuit board is formed on a planar surface of a substrate by a photolithography technology. The contact structure is formed of a silicon base having an inclined support portion created through an anisotropic etching process, an insulation layer formed on the silicon base and projected from the inclined support, and a conductive layer made of conductive material formed on the insulation layer so that a contact beam is created by the insulation layer and the conductive layer. The contact beam exhibits a spring force in a transversal direction of the contact beam to establish a contact force when the tip of the beam portion pressed against a contact target.