The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2002
Filed:
Apr. 06, 2001
Applicant:
Inventors:
Shigeki Takahashi, Okazaki, JP;
Hiroaki Himi, Nagoya, JP;
Satoshi Shiraki, Toyohashi, JP;
Masatoshi Kato, Aichi-gun, JP;
Assignee:
Denso Corporation, Kariya, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/9788 ;
U.S. Cl.
CPC ...
H01L 2/9788 ;
Abstract
In an LDMOS, an n-type region which is formed to have a concentration higher than that of an n-type substrate and whose concentration gradually increases from the n-type substrate to an n type drain region is disposed so as to surround the n -type drain region Further, a p -type contact region disposed adjacent to an n -type source region is formed so as to extend below the n -type source region so that a parasitic transistor formed by the n -type source region a p-type base region and the n-type substrate is hardly turned ON.