The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2002
Filed:
Mar. 29, 2001
Chrong Jung Lin, Hsin-Tien, TW;
Sheng-Wei Tsao, Hsinchu, TW;
Di-Son Kuo, Hsinchu, TW;
Jack Yeh, Hsin-Chu, TW;
Wen-Ting Chu, Hsin-Chu, TW;
Chung-Li Chang, Hsh-Chu, TW;
Chia-Ta Hsieh, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
Within both a split gate field effect transistor (FET) device and a method for fabricating the split gate field effect transistor (FET) device there is formed within a semiconductor substrate a trench within whose sidewall is fully contained a channel region within the split gate field effect transistor (FET) device. Similarly, there is also formed within the split gate field effect transistor a floating gate electrode within the trench and covering within the trench a lower sub-portion of the channel region. Finally, the floating gate electrode in turn has formed vertically and horizontally overlapping thereover within the trench a control gate electrode which covers an upper sub-portion of the channel. The split gate field effect transistor (FET) device is fabricated with enhanced areal density and enhanced performance.