The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2002
Filed:
Mar. 09, 2000
Applicant:
Inventors:
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
A dual damascene process. After the via etch, a via protect layer ( ) is deposited in the via ( ). The via protect layer ( ) comprises a material that has a dry etch rate at least equal to that of the IMD ( ) and a wet etch rate that is approximately 100 times that of the IMD ( ) or greater. Exemplary materials include PSG, BPSG, and HSQ. The trench pattern ( ) is formed and both the via protect layer ( ) and IMD ( ) are etched. The remaining portions of the via protect layer ( ) are then removed prior to forming the metal layer ( ).