The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2002

Filed:

Jun. 30, 2000
Applicant:
Inventors:

Karen L. Holloway, Poughkeepsie, NY (US);

Kurt A. Tallman, Essex Junction, VT (US);

Robert C. Wong, Poughkeepsie, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/166 ;
U.S. Cl.
CPC ...
H01L 2/166 ;
Abstract

Described herein is a method for selectively enlarging vias connecting two different layers of conductors in a semiconductor device. Whether or not an individual via is extended on each of its edges is determined by the distance of the edge to the neighboring features. Since many vias can be selectively enlarged along one or more edges without infringing upon neighboring structures, via integrity and conductive characteristics are improved.


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