The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2002
Filed:
Jun. 06, 2001
Kuei-Chun Hung, Hsin-Chu, TW;
Vencent Chang, Taipei, TW;
I-Hsiung Huang, Kaohsiung, TW;
Ya-Hui Chang, Ping-Tung, TW;
Abstract
In accordance with the present invention, a method for forming a via-first dual damascene interconnect structure by using gap-filling material whose thickness is easily controlled by a developer is provided. The essential part of the present invention is the application of gap-filling materials such as novolak, PHS, acrylate, methacrylate, and COMA to fill vias. Filling vias with these materials can get a greater planar topography for trench patterning due to its excellent gap-filling capacity, protect the bottom of vias from damage during the trench etch, and prevent the fence problem by using a developer to control its thickness in vias.