The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2002
Filed:
Jan. 23, 2001
Naoaki Ogure, Tokyo, JP;
Takao Kato, Tokyo, JP;
Kuniaki Horie, Yamato, JP;
Yuji Araki, Fujisawa, JP;
Ebara Corporation, Tokyo, JP;
Abstract
The present invention relates to a method and apparatus for forming interconnects on a substrate such as a semiconductor wafer by filling a conductive material such as copper (Cu) in fine recesses formed in a surface of the substrate. A method for forming interconnects comprises providing a substrate and a target composed of a conductive material in confrontation with each other in a chamber, introducing a sputtering gas into the chamber while a high voltage is applied between the substrate and the target to cause the sputtering gas to collide with the target, and depositing particles of the conductive material emitted from the target on the surface of the substrate to form a thin film, while sputter-etching the thin film by reflection sputtering gas molecules reflected from the target and having high energy.