The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2002
Filed:
Mar. 13, 1998
Micron Technology, Inc., Boise, ID (US);
Abstract
A method of forming isolation regions in a silicon substrate comprising the steps of forming a trench in the silicon substrate, filling the trench with a silanol polymer material then heating the silanol polymer material so that silicon dioxide is formed in the trench and thereby forms the isolation region. In the preferred embodiment, the silicon substrate is covered by a masking stack which is then etched to expose the underlying silicon substrate. The silicon substrate is then etched to form the trench and the silanol polymer material is deposited in the trench and fills the trench from the bottom up thereby avoiding divots and other defects. The silanol polymer grows faster on the silicon substrate than it does on the nitride. After the silanol polymer is reacted to form the silicon dioxide, CMP polishing is then used to remove the remaining masking stack and silicon dioxide above the surface of the silicon substrate.