The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2002
Filed:
Feb. 23, 1999
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An embodiment of the instant invention is a method of fabricating an electronic device formed over a semiconductor substrate and having a conductive feature comprised of tungsten, the method comprising the steps of: forming a nucleation layer over the semiconductor substrate by introducing a combination of WF , H and a plasma; and forming a tungsten layer on the nucleation layer by means of chemical vapor deposition. In an alternative embodiment, an insulating layer is formed on the substrate and situated between the nucleation layer and the substrate. Preferably, this embodiment additionally includes the step of forming a nitrogen-containing layer under the nucleation layer by introducing a combination of WF , N , H , and a plasma. The conductive feature is, preferably, a conductive gate structure, and the insulating layer is, preferably, comprised of: an oxide, a nitride, an insulating material with a dielectric constant substantially higher than that of an oxide, and any combination thereof.